The group fabricated three-terminal devices with the new structure, where a Ta/CoFeB/MgO-based magnetic tunnel junction is used, and successfully demonstrated the switching operation.

Lobachevsky University scientists have implemented a new variant of the metal-oxide memristive device, which holds promise for use in RRAM (Resistive Random Access Memory) and novel computing ...

New LED structure cuts device costs. 17 Jun 2002. A unique production process promises to bring cheaper, ... "This vertical device differentiates Oriol from other HB-LED chip makers," said Oriol's ...

Recently, there have been extensive investigations of polymer solar cells (PSCs) with an inverted device structure, using modified indium tin oxide (ITO) as the cathode (the ITO is modified by n ...