Engineers have developed a new-structure magnetic memory device utilizing spin-orbit torque-induced magnetization switching. The research group of Professor Hideo Ohno and Associate Professor ...

Figure 1: Device structure and energy levels of the inverted-type PSCs. Figure 2: Device performances of the inverted structure (ITO/PFN interlayer/active layer/MoO 3 (10 nm)/Al) PTB7:PC 71 BM ...

The research group of Professor Hideo Ohno and Associate Professor Shunsuke Fukami of Tohoku University has developed a new-structure magnetic memory device utilizing spin-orbit- torque-induced ...