Cross-temperature testing for writing and reading across the data sheet temperature range can be considered when there are demonstrated sensitivities for programming at low and reading at …

Data Retention is a measure of the ability of a memory cell in an NVM array to retain its charge state in the absence of applied external bias. Data retention failure occurs when a memory cell …

This application note provides a perspective on nonvolatile flash memory reliability testing methodology and discusses the influence of key factors in terms of Program/Erase endurance …

Efficient programming of the MSP430 flash is governed by two major requirements: supply voltage (DVCC) and the flash timing generator clock (f FTG). For the MSP430F1xx and most …

PCHTDR checks the data retention of cycled devices at a high temperature. As shown by comparing Table 1 (page 2) and Table 2 (page 3), Micron's NOR Flash testing conditions meet …

For retention testing, a temperature acceleration model is used where the memory is baked at temperatures as high as 125°C and the results are fit to confirm data retention time at system …

The high temperature storage test is typically used to determine the effects of time and temperature, under storage conditions, for thermally activated failure mechanisms and time-to …

Endurance and retention qualification specifications (for cycle counts, durations, temperatures, and sample sizes) are specified in JESD47 or may be developed using knowledge-based …

The JEDEC JESD47 test spec for flash memory is a Stress-Test-Driven Qualification of Integrated Circuits that specifies qualification requirements (test times, temperatures, sample sizes, etc.) …

JESD47I requires two different tests to validate data retention: • The uncycled high-temperature data retention (UCHTDR) test is performed on uncy-cled devices at 125°C. A data pattern is …