TI's space-grade GaN FET gate drivers support the entire voltage range needed to design satellite power systems.

B&T Composites’ story includes diversification into new markets and technologies like photonics-based SHM, aerospace and ...

Texas Instruments (TI) has unveiled what it claims is the first family of radiation-hardened and radiation-tolerant ...

Infineon is advancing industry-wide standardization by offering its CoolGaN G3 transistors in silicon MOSFET packages.

2021). Here, however, we concentrate on another key element of organic FETs, namely, the dielectric layer that separates the transistor active material and the gate electrode. Since the physical and ...

gate and drain contacts. Binder and co-worker are keen to explore the possibility of replicating their success with HfO 2 on a SiC transistor. “Vertical gallium nitride is still a relatively immature ...

Currently, there are two commercial e-mode transistors: the Schottky Gate (SG) p-GaN and the HD-GIT (Hybrid-Drain-embedded Gate Injection Transistor) transistors. However, they differ from the gate ...

Shandong University team reports an novel enhancement-mode p-GaN gate HEMTs with the highest threshold voltage a 7.1V Researchers at Shandong University in China have reported an enhancement-mode ...

The company has secured financing of Rs 1,988 crore from Power Finance Corporation (PFC) for a 300 MW solar-wind hybrid renewable energy project. This hybrid project will combine solar capacity in ...