The CEO expects the majority of its sales over the next few years to come from domestic markets, but 30 percent will be overseas. If such success follows, that will surely help to grow the role of ...

Infineon is advancing industry-wide standardization by offering its CoolGaN G3 transistors in silicon MOSFET packages.

CAMBRIDGE, England--(BUSINESS WIRE)--Cambridge GaN Devices (CGD), a leading innovator in gallium nitride (GaN) power devices, has successfully closed a $32 million Series C funding round. The ...

A question arose at Electronics Weekly after Rohm introduced an 8pad isolated for GaN transistors. In the BM6GD11BFJ-LB data ...

Navitas Semiconductor,. which makes the GaNFast GaN and GeneSiC SiC power semiconductors, has announced that both ...

In addition to being a runnable CLI tool, D2 can also be used to produce diagrams from Go programs. For examples, see ./docs/examples/lib. This blog post also demos a complete, runnable example of ...

This promising family of alternatives includes SiGe, InP and GaN. The latter is the stand out candidate, due to its superior electron mobility, high breakdown voltage, and its capacity to operate at ...

Company's 2025 predictions say GaN is becoming a game-changer across multiple industries In its 2025 predictions, Infineon says GaN will be a game-changing material across consumer, mobility, ...

Designed to improve motor control, power conversion, and the integration of wide bandgap (WBG) semiconductors like silicon carbide (SiC) and gallium nitride (GaN), this new ... PSOC Control C3 Entry ...

In this article, we summarize a recent initial demonstration of an aluminum nitride (AlN) UWBG-based MOSFET device. Decades of research and development are needed to successfully commercialize a new ...

SiC and GaN advances used improved device structures and higher levels of integration to support higher voltages and power densities while reducing solution cost. Meanwhile, silicon-based MOSFET ...