The US, China and Japan are working on research and development in gallium oxide crystal growth and productionizing gallium ...
Abstract: A charge trapping layer (CTL) technique is incorporated to achieve a normally-off Ga2O3 MOSFET. The gate dielectric was engineered using a stack composed of a blocking layer (16 nm HfOx / 2 ...
Chongqing Key Laboratory of Multi-Scale Manufacturing Technology, Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, China Chongqing School, ...
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