The US, China and Japan are working on research and development in gallium oxide crystal growth and productionizing gallium ...
Abstract: A charge trapping layer (CTL) technique is incorporated to achieve a normally-off Ga2O3 MOSFET. The gate dielectric was engineered using a stack composed of a blocking layer (16 nm HfOx / 2 ...
Chongqing Key Laboratory of Multi-Scale Manufacturing Technology, Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, China Chongqing School, ...
State Key Laboratory of Silicon and Advanced Semiconductor Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang310027, China Institute of Advanced ...
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