News
Bit-serial computing-in memory with SRAM cells (SRAM-CIM) enables a full set of integer and floating-point arithmetic operations and various data-intensive computations. Carbon nanotube field-effect ...
Abstract: This work demonstrates a 256 (row) ×512 (col.) fully row/column-parallel in-memory computing (IMC) macro employing foundry MRAM in 22-nm FD-SOI CMOS. Embedded nonvolatile memory (eNVM) ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback