After 500-hour HTOL reliability test on memory device, off-state leakage was found in nMOSFETs of word-line decoder. According to electrical and physical failure analysis on IC and device level, we ...

The design leverages the predictability of dynamic circuits to provide significant decoder leakage reduction in unselected banks. The dynamic decoder has been fabricated on a 90 nm bulk CMOS process.

NEC have developed a 32Mb MRAM chip that, thanks to the company's efforts to miniturize the control circuits, allows 73-percent of a memory macro's area to be allocated to memory cells.