A research team led by Prof. Sheng Zhigao from the Hefei Institutes of Physical Science of the Chinese Academy of Sciences, ...

Veeco Instruments has announced that the University of Michigan has published a breakthrough study on atomic layer deposition ...

Figure 1: The epilayer structure of an InGaN green laser diode on a c-sapphire substrate. The key to the success of Miyoshi et. al. was their ability to improve the quality of the InGaN active layers.

laser diodes. The difficulties of using such NWS laser diodes are briefly stated and consequences of using such laser diodes in high power cavity are briefly discussed.

The first was an InGaAs/GaAs strained-layer quantum-well (QW) laser, and the second was a broadband light-emitting diode (LED) based on dual asymmetric ... into gain saturation with a high-loss cavity ...