Recent patent filings emphasise critical aspects of power GaN technology such as gate design and packaging, resulting in ...

Imec researchers have set a new benchmark in RF transistor performance for mobile applications. They present a gallium ...

Mitsubishi Electric announced that it has developed a world’s first compact 7GHz band gallium nitride (GaN) power amplifier ...

GaN-on-Si is considered the best of both worlds marrying the high performance for GaN transistors with the scalability and cost-effective platform of silicon. However, it is a challenging design due ...

In a recent study published in Engineering, researchers have developed an exact algorithm for placement optimization in mixed-cell-height (MCH) ...

Using gallium nitride (GaN) field-effect transistors (FETs) in a power supply can help boost efficiency and enable operation at higher switching frequencies, helping designers meet the strict power ...