If the PMOS and NMOS transistors are sized so that g m1 = g mb2, the V sub term vanishes and I x = V x(g m1 + g mb1). In this case, the active load impedance Z LOAD = 1/ (g m1 + g mb1 ) and doesn ...

Not since Neil Armstrong took his first steps on the moon has the transistor seen such a dramatic change, and that change holds some big promises. "Intel has developed a complete high-k plus metal ...

A active clamp circuit design for rectifiers at a high switching frequency of 200-kHz to 500-kHz ... (EMC), thermal dissipation, and active clamp for metal-oxide semiconductor field-effect transistors ...

The new 3.3 V low-noise NMOS transistor gives up to ten times lower flicker noise, while the flicker noise for the 3.3 V low-noise PMOS transistor that complements it is halved for all drain currents.

Purdue Engineers Create Model For Testing Transistor Reliability Date: December 8, 2004 Source: Purdue University Summary: Researchers at Purdue University have created a "unified model" for ...

From 2007 to 2012 he was a senior scientist at NXP Semiconductors, working on SiGe heterojunction bipolar transistors for RF applications. He joined imec in 2012, where he is a principal member of ...