News
12d
Tech Xplore on MSNResearchers achieve record-breaking RF GaN-on-Si transistor performance for high-efficiency 6G power amplifiersImec researchers have set a new benchmark in RF transistor performance for mobile applications. They present a gallium ...
Imec’s RF GaN-on-Si transistor achieves record efficiency and output power for an E-mode device, targeting high-efficiency 6G ...
6d
Tech Xplore on MSNTiny gallium nitride transistors boost chip speed and efficiency in new 3D designThe advanced semiconductor material gallium nitride will likely be key for the next generation of high-speed communication ...
Gaze into the temporal distance and you might spot the end of the age of silicon looming somewhere out there, as a research ...
Global spending on cloud computing is expected to hit $1.3 trillion by 2025, a figure that reflects the extraordinary demand ...
Researchers from the University of Bristol and Northrop Grumman Mission Systems discovered a latch-effect in gallium nitride ...
14d
The Brighterside of News on MSNGroundbreaking crystal oxide transistors are faster, smaller and more reliable than siliconShrinking computers, faster phones, and smarter gadgets all rely on one tiny component: the transistor. Invented in the 20th ...
Axcelis leverages ion implantation expertise to thrive in the semiconductor sector. Read more about ACLS stock's 65% upside ...
Commercially available normally-off GaN power high-electron-mobility transistor (HEMT) devices have typically adopted a p-GaN gate structure. In the gate region, there exist a Schottky junction ...
VG refers to a structure in which the gate, performing the switch function of the transistor in DRAM ... that positions the circuit portion below the cell area along with 4F² cells, improvements can ...
Indradeep Ghosh, a technology leader with over 25 years in industrial R&D, explores the evolving landscape of quantum ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results