Continue reading “Building Diode And Diode-Transistor Logic Gates ... The next step was to build a S-R latch using the NAND gates and inverters, which holds some basic memory.

Integrating the Schottky diode into GaN transistor helps boost power-system efficiency by reducing dead-time losses.

N-channel metal oxide semiconductor field effect transistors (MOSFETs) using Ta/sub 2/O/sub 5/, gate oxide were fabricated. The Ta/sub 2/O/sub 5/ films were deposited by plasma enhanced chemical vapor ...

Using gallium nitride (GaN) field-effect transistors (FETs) in a power supply can help boost efficiency and enable operation at higher switching frequencies, helping designers meet the strict power ...

These polarity-configurable thin-film transistors (PC-TFTs) enable flexible, adaptive CMOS circuits suitable for wearables, ...

Kitguru.net Hardware editors Leo Waldock and Luke Hill discuss 3D NAND and which SSD interface is going to be the most widely ...

Strong demand in the memory market is expected to keep NAND Flash prices at elevated levels in the second half of 2025, ...

New drive uses XL-Flash, a type of SLC NAND, and a new in-house controller Kioxia has unveiled plans for a new SSD it says could hit an impressive 10 million IOPS, a level of performance aimed ...

Graphene-based Biology-gated Transistors (Cardean Transistors) directly read molecular signals of active biology using advanced electronics. This proprietary tech breakthrough can be used as a ...

Commercially available normally-off GaN power high-electron-mobility transistor (HEMT) devices have typically adopted a p-GaN gate structure. In the gate region, there exist a Schottky junction ...