In the below example, you can notice that a higher drive strength cell (BUFX20) has less transition time (0.0349ns), results ...

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Abstract: Schematic diagrams of a high-speed logic block in two slightly different forms for mass fabrication, using complementary MOSFET components, are given. Depending upon the polarity of the ...

Despite the relatively stagnant demand for mobile phones and PCs in the first half of 2025, Kioxia, the leader in NAND flash, ...

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As QLC NAND technology is rapidly penetrating the market, NAND controller chip vendor Phison Electronics expects UFS QLC to ...

GIDL is primarily caused by band-to-band tunneling (BTBT) at the drain junction under high electric field conditions. This ...

Abstract: This letter presents a novel impedance-decoupling based gate-drive scheme for DC solid-state circuit breakers (SSCBs) targeting ultra-high fault di/dt protection in densely configured DC ...

The contents are marked using 1, 2, 3, etc. to indicate the order of learning the topics Gates and Circuits: This section contains the basics of quantum gates and circuits. It is aimed at beginners ...