For describing a saturated subthreshold NMOS transistor, we rewrite Equation (2) as follows, Given a fixed source potential (i.e., V s is a constant), the NMOS transistor’s transconductance can be ...

The principal electrical equivalent circuit for this transistor is illustrated in figure 2. A variable drain resistor is extended to the NMOS core, which is modeled by BSIM3. The influence of the bulk ...

Objective: To develop a practical understanding of CMOS digital circuit design, emphasizing SPICE modeling, delay optimization, and layout-aware considerations in VLSI systems. Methodology: The ...

Model simulation results obtained for nMOS transistors with hot-carrier-induced oxide damage demonstrate good agreement with the ... and the capabilities of the model have been explored by various ...

When the input is low (0), the PMOS transistor conducts, pulling the output high (1), while the NMOS transistor is off. This gate serves as the building block for all other logic gates, including AND, ...

Note that we use the source (instead of the drain) here because CMOS transistors are symmetrical and for an NMOS transistor the source is the terminal that is at the lower voltage. In an NMOS ...

The most complex electronic device yet built from carbon nanotubes has been demonstrated. The system is a functional universal computer, and represents a significant advance in the field of ...

Model simulation results obtained for nMOS transistors with hot-carrier-induced oxide damage demonstrate good agreement with the ... and the capabilities of the model have been explored by various ...