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Spin Transfer Technologies has announced its proprietary Precessional Spin Current (PSC) structure results. According to the company, this technology can enhance the performance of anyone’s MRAM array ...
Persistent memory, offering non-volatility with near-DRAM speeds, has enabled the development of PM-aware data structures that skilfully balance the demands of performance, reliability, and ...
The next big hurdle, he predicts, is to make memory devices in which both the bottom and top electrodes are carbon nanotubes. “Right now, the [UCLA group] has half of that structure . . . a big ...
(Phys.org) —Researchers at UCLA have created a nanoscale magnetic component for computer memory chips that could significantly improve their energy efficiency and scalability.
On Tuesday, Samsung Electronics Co (OTC:SSNLF) announced that it has started mass production of the world’s most advanced 286-layer NAND flash memory chips, which offer increased data storage ...