The “3D-ness” of this memory of course refers to the stackability of cell layers. But stacked-die is another 3D approach. Micron’s Hybrid Memory Cube (HMC) uses stacked DRAM die and through-silicon ...

Such defects can lead to shorts, interference between neighboring memory strings, and other performance issues.” [4]. Stacking several decks of memory arrays (e.g. 2 decks of 64-layers to provide an ...

Kioxia Corporation and Western Digital Corp., today announced that the companies have developed their sixth-generation, 162-layer 3D flash memory technology. Marking the next milestone in the ...

To fill computers’ voracious appetite for data, Intel and Micron say they’ve developed the first new kind of memory since NAND flash was introduced in 1989. The new technology, 3D XPoint, is a ...

Stacked memory up to 512GB sounds revolutionary, but NEO’s bold claims face skepticism amid stagnant DRAM prices and limited benefits for everyday users.

Intel and Micron emphasized that in terms of data, time is not necessarily on our side, thus driving the need for 3D XPoint. By 2020, we’re going to generate another 44 Zettabytes of data.

Unveiled at ISSCC 2025, the new 3D flash memory innovation, together with the companies’ revolutionary CBA (CMOS directly Bonded to Array) technology 1, incorporates one of the latest interface ...

The 218-layer 3D flash memory leverages 1 Tb triple-level-cell (TLC) and quad-level-cell (QLC) with four planes and features innovative lateral shrink technology to increase bit density by over 50 ...