Multi-die assemblies enable more analog content, but that adds new security vulnerabilities for which there is little ...

Abstract: Random telegraph noise (RTN) in resistive random access memory (RRAM) introduces variation in resistance which might cause errors in RRAM based logic circuits. In this paper, we find ...

Abstract: This paper describes the details of a novel strained transistor architecture which is incorporated into a 90nm logic technology on 300mm wafers ... have gate length of 45nm and 50nm for NMOS ...

A Binary Adder is a digital circuit that performs the arithmetic binary addition of two numbers for the logic operations and laws of Boolean Algebra. The adders are used in combinational circuit ...

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This project demonstrates the **design of a 6-Transistor (6T) SRAM memory cell** using the **Electric VLSI Design System**. It includes only the **schematic and layout**—simulation and waveform ...