Electronic Products1d
TI claims first space-grade 200-V GaN FET gate driver
TI's space-grade GaN FET gate drivers support the entire voltage range needed to design satellite power systems.
CompositesWorld1d
Beyond filament winding: Fabricator expands into sensor technology, hydrogen tanks and more
B&T Composites’ story includes diversification into new markets and technologies like photonics-based SHM, aerospace and ...
electronics360.globalspec1d
First rad-hard GaN FET gate drivers enable smaller satellites
Texas Instruments (TI) has unveiled what it claims is the first family of radiation-hardened and radiation-tolerant ...
EDN2d
GaN transistors fit standard Si packages
Infineon is advancing industry-wide standardization by offering its CoolGaN G3 transistors in silicon MOSFET packages.
Frontiers18d
Towards sustainable, solution-processed organic field-effect transistors using cashew gum as the gate dielectric
2021). Here, however, we concentrate on another key element of organic FETs, namely, the dielectric layer that separates the transistor active material and the gate electrode. Since the physical and ...
IEEE1mon
An Experimentally Verified Behavioral GaN HD-GIT Transistor Model
Currently, there are two commercial e-mode transistors: the Schottky Gate (SG) p-GaN and the HD-GIT (Hybrid-Drain-embedded Gate Injection Transistor) transistors. However, they differ from the gate ...
psuconnect1mon
Prosiect hybrid ACME bagiau solar Rs 1,988 crore gan Power Finance Corporation
The company has secured financing of Rs 1,988 crore from Power Finance Corporation (PFC) for a 300 MW solar-wind hybrid renewable energy project. This hybrid project will combine solar capacity in ...
Frontiers8y
Light-Effect Transistor (LET) with Multiple Independent Gating Controls for Optical Logic Gates and Optical Amplification
A light-effect transistor (LET) offers electronic-optical hybridization at the component level, which can continue Moore's law to the quantum region without requiring a FET's fabrication complexity, e ...