Integrating the Schottky diode into GaN transistor helps boost power-system efficiency by reducing dead-time losses.

Now researchers from University of Science and Technology of China (USTC) have demonstrated a vertical GaN PiN diode with a ...

A pair of half-bridge drivers from STMicroelectronics help designers deliver improved efficiency, power density, and ...

Between OLED and QLED, which TV technology is the best? We compare brightness, contrast, color and more to settle things once and for all. David reviews TVs and leads the Personal Tech team at ...

Abstract: This paper attempts to fulfill the need for a quantitative analysis of the microwave equivalent steady state circuit parameters of the reverse biased PIN diode as a function of the process ...

Abstract: A new fabrication technique for passivated silicon Schottky barrier diodes is described. It is shown that the p-n junction guard ring or "hybrid" approach produces Schottky barriers whose ...