CAMBRIDGE, England--(BUSINESS WIRE)--Cambridge GaN Devices (CGD), a leading innovator in gallium nitride (GaN) power devices, has successfully closed a $32 million Series C funding round. The ...

Gallium Nitride (GaN) power devices are becoming increasingly important in the field of power electronics due to their ability to operate at high voltages and efficiencies. Recent research has ...

GaN specialist Efficient Power Conversion Corporation (EPC) has announced the release of the 4th edition of its textbook, GaN Power Devices for Efficient Power Conversion.

GaN specialist Efficient Power Conversion Corporation (EPC) has announced the release of the 4th edition of its textbook, GaN ...

Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has ...

SiC and GaN advances used improved device structures and higher levels of integration to support higher voltages and power densities while reducing solution cost. Meanwhile, silicon-based MOSFET ...

NVTS), the industry leader in next-generation GaNFast gallium nitride (GaN) and GeneSiC silicon carbide (SiC) power semiconductors, today announced its adoption of both technologies into Dell’s ...

Power devices continue to evolve rapidly as SiC and GaN technologies become more efficient, integrated, and cost-effective. Meanwhile, steady improvements in MOSFET structures and processes enable ...