TI's space-grade GaN FET gate drivers support the entire voltage range needed to design satellite power systems.

GaN specialist Efficient Power Conversion Corporation (EPC) has announced the release of the 4th edition of its textbook, GaN Power Devices for Efficient Power Conversion.

GaN specialist Efficient Power Conversion Corporation (EPC) has announced the release of the 4th edition of its textbook, GaN ...

GaN is especially well-established in low-power applications like chargers for personal electronics, while silicon and SiC have the advantage in high-power applications. The recent IEEE Electron ...

Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has ...

This CES-featured 100W charging block comes with GaN technology to power up to three devices at once faster than the standard ...

Dell selects Navitas’ GaN and SiC devices for AI Notebooks Navitas’ GaNFast power ICs enable high-frequency, high-efficiency power conversion, and have recorded 3x more power and 3x faster charging in ...

SiC and GaN advances used improved device structures and higher levels of integration to support higher voltages and power densities while reducing solution cost. Meanwhile, silicon-based MOSFET ...

GaN power semiconductors are on a tremendous growth trajectory. GaN is on its way to reaching more tipping points in its adoption in more industries. Consumer chargers and adapters have been the ...

Gallium Nitride (GaN) power devices are becoming increasingly important in the field of power electronics due to their ability to operate at high voltages and efficiencies. Recent research has ...

TORRANCE, Calif., Feb. 05, 2025 (GLOBE NEWSWIRE) -- (Nasdaq: NVTS), the industry leader in next-generation GaNFast gallium nitride (GaN) and GeneSiC silicon carbide (SiC) power semiconductors, today ...