News
BF-GAN offers a generative AI solution for two-phase flow research, substantially lowering the time and cost required to obtain a large number of high-quality image data.
Electrical impedance tomography (EIT) is a powerful tool for imaging two-phase flow systems in various applications; however, the reconstruction quality of EIT is often limited by the nonlinear and ...
Yet, convolutional neural networks (CNNs), that are considered the de facto standard vision model, deal with the asymmetric case only in most cutting-edge CNNs-based optical flow techniques. We bridge ...
Flow-GAN: Combining Maximum Likelihood and Adversarial Learning in Generative Models This repository provides a reference implementation for learning Flow-GAN models as described in the paper: ...
LTSpice Model Simplifies Designing with GaN Tuesday 15th August 2017 GaN Systems' simulation tool provides a convenient way to understand GaN switching characteristics GaN Systems has introduced a new ...
This new GaN SiP now shows Weltrend’s commitment to the AC-to-DC power market as they offer a complete system solution using Transphorm’s SuperGaN® technology.
Transphorm, the GaN power semiconductor specialist, has a simulation model and preliminary datasheet for its 1200V GaN-on-Sapphire FET – TP120H070WS FET which samples in Q1 2024.
Transphorm announced the availability of its 1,200-V FET simulation model and preliminary datasheet. The TP120H070WS FET is the first of its kind and the only 1,200-V GaN-on-sapphire power ...
Transphorm's 1200 V GaN-on-Sapphire device model will help customers explore its higher performance and 98.7% efficiency advantages vs. SiC MOSFETs.
Results that may be inaccessible to you are currently showing.
Hide inaccessible results