Infineon is advancing industry-wide standardization by offering its CoolGaN G3 transistors in silicon MOSFET packages.

GaN suppliers have taken various approaches to packaging, leading to a lack of multiple footprint-compatible sources for ...

CAMBRIDGE, England--(BUSINESS WIRE)--Cambridge GaN Devices (CGD), a leading innovator in gallium nitride (GaN) power devices, has successfully closed a $32 million Series C funding round. The ...

A question arose at Electronics Weekly after Rohm introduced an 8pad isolated for GaN transistors. In the BM6GD11BFJ-LB data ...

Navitas Semiconductor,. which makes the GaNFast GaN and GeneSiC SiC power semiconductors, has announced that both ...

GaN power semiconductors are on a tremendous growth trajectory. GaN is on its way to reaching more tipping points in its adoption in more industries. Consumer chargers and adapters have been the ...

In addition to being a runnable CLI tool, D2 can also be used to produce diagrams from Go programs. For examples, see ./docs/examples/lib. This blog post also demos a complete, runnable example of ...

In this article, we summarize a recent initial demonstration of an aluminum nitride (AlN) UWBG-based MOSFET device. Decades of research and development are needed to successfully commercialize a new ...

“Vertical gallium nitride is still a relatively immature platform for device development,” says Binder, who points to a very mature, established commercialisation path for SiC MOSFETs. “If we can ...

Electrical measurements on vertical GaN MOSFETs revealed a current density of 330 mA mm-1 at a drain bias of 5 V, and a positive threshold bias of 3.5 V. Specific on-resistance is 8 mΩ cm 2, but could ...

Commercially available normally OFF GaN transistors can be categorized into two main groups: hybrid transistors, which incorporate a Si MOSFET, and e-mode transistors. The latter are the most ...