Abstract: The robustness against Electrostatic Discharge (ESD) events of gated diodes, fabricated in CMOS 45nm FDSOI technology, is compared for 10nm and 145nm Buried Oxide (BOX) thickness. It is ...

The impact of ESD-induced soft drain junction damage on product lifetime was investigated. Several thousand input-output (I/O) pads of a 0.35 /spl mu/m CMOS IC were stressed by ESD (electrostatic ...

DNA Web Team Updated : Nov 19, 2013, 11:17 PM IST SEOUL, South Korea and CUPERTINO, Calif., Jan. 9, 2012 /PRNewswire/ -- MagnaChip Semiconductor Corporation ("MagnaChip") (NYSE: MX), a Korea-based ...