Recent technological advances have enabled the development of a wide range of increasingly sophisticated wearable and ...

Shrinking silicon transistors have reached their physical limits, but a team from the University of Tokyo is rewriting the ...

Consequently, the switching transient performance of a GaN transistor with a p-GaN gate could be significantly influenced by the aforementioned factors. In this work, the threshold voltage instability ...

A simple transistor circuit offers an effective solution to this problem ... When a problem occurs, the host microcontroller can switch off the MOSFET and thus disable the sensor. The reward for this ...

This paper investigates extremely low-power circuits based on new Si/SiGe heterojunction tunneling transistors (HETTs) that have a subthreshold swing of . Device characteristics, as determined through ...