The fun part about logic gates is that there are so many ways to make them, with each approach having its own advantages and disadvantages. Although these days transistor-transistor logic (TTL) is … ...

Integrating the Schottky diode into GaN transistor helps boost power-system efficiency by reducing dead-time losses.

The 650V IGBTs reduce losses, increase solar inverter efficiency by 15%, withstand heat and humidity, and enhance reliability ...

Using gallium nitride (GaN) field-effect transistors (FETs) in a power supply can help boost efficiency and enable operation at higher switching frequencies, helping designers meet the strict power ...

N-channel metal oxide semiconductor field effect transistors (MOSFETs) using Ta/sub 2/O/sub 5/, gate oxide were fabricated. The Ta/sub 2/O/sub 5/ films were deposited by plasma enhanced chemical vapor ...

Integrated circuits have evolved from simple microchips to complex, nanoscale marvels, driving advances in computing, ...

These polarity-configurable thin-film transistors (PC-TFTs) enable flexible, adaptive CMOS circuits suitable for wearables, ...

We present electrical results from polysilicon thin film transistors (TFT's) fabricated using laser-recrystallized channels and gas-immersion laser-doped source-drain regions. A simple, four-level ...

STMicroelectronics’ STGWA30IH160DF2 IGBT combines a breakdown-voltage rating of 1600 V and high thermal performance with ...

The advanced semiconductor material gallium nitride will likely be key for the next generation of high-speed communication ...

Belgian research hub Imec has claimed a new benchmark in RF transistor performance for mobile applications with a ...