The circuit consists of an N-channel MOSFET, two resistors, and a Schottky diode. The modulation signal, v-sig(t), is connected to the drain terminal of the MOSFET. The carrier signal, v-carr(t), is ...

The semiconductor diode is one of the earliest semiconductor devices, and its application is very wide, and it plays an irreplaceable role in many fields. This paper designs a diode unidirectional ...

At 4 Amps, power loss by a Schottky diode in the circuit will be: 4 x 0.4W = 1.6W. And in ordinary diode: 4 x 0.7 = 2.8W. ... If the supply voltage is less than the Gate-to-Source voltage (Vgs) of ...

In this module, you will learn how to analyze a p-n diode and how it differs from a Schottky diode. Specific items of interest are: a) The capacitance versus voltage relation, b) The diode current, ...

Traditional methods require multiple Zener or TVS diodes to protect MOSFET gates. However, the Asymmetrical Series simplifies this by offering comprehensive protection in a single component, ...

Last week we covered diodes, specifically thermionic and PN junction diodes.But oh, there are more; and they’re special! One of the the most commonly used ‘specialty’ diode would have to be ...

The diode voltage falls linearly with temperature making it necessary to have an operational amplifier conditioning circuit for direct readout. Output calibration is achieved using a voltage reference ...

Summary <p>The discovery of the rectifier effect presented by a PN junction by Russell Ohlin, 1940, was the founding act of William Shockley's 1949 invention of the bipolar transistor, a component ...