However, ensuring these advantages are maintained for integrated circuits is a challenge ... Figure 4: CMOS-based pass-transistor XOR gate and a full adder. Figure 6: CMOS-based two-to-one ...

Shrinking silicon transistors have reached their physical limits, but a team from the University of Tokyo is rewriting the ...

the scaling of silicon-based metal-oxide-semiconductor field-effect transistors (Si MOSFETs) and evolution of novel structure transistors in accordance with Moore’s Law, especially for modern ...

A technical paper titled “Analysis of Logic-in-Memory Full Adder Circuit With Floating Gate Field Effect Transistor (FGFET)” was published ... with three different types of FGFET-based full adder ...

A technical paper titled “Gate Drive Circuit Suitable for a GaN Gate Injection Transistor” was published by researchers ... Several studies in the literature have proposed the gate drive circuits with ...

Individual transistors made from carbon nanotubes are faster and more energy efficient than those made from other materials. Going from a single transistor to an integrated circuit full ...

[Andrew] quickly moves on to talk about switching transistors and how they are used to build gates like the OR NOR gate seen above. If this is the least bit interesting you should also look back ...

Production-Worthy DPN Centura System Delivers Effective Oxide Thickness Scaling Below 11 Angstroms Applied Materials, Inc. (Nasdaq: AMAT) extends transistor gate stack technology to the 65nm ...