News
If the PMOS and NMOS transistors are sized so that g m1 = g mb2, the V sub term vanishes and I x = V x(g m1 + g mb1). In this case, the active load impedance Z LOAD = 1/ (g m1 + g mb1 ) and doesn ...
To gain a similar boost and to increase overall chip performance, chipmakers are applying selective epi in NMOS transistors in their 20nm node devices. The NMOS transistor differs from the PMOS in ...
Figure 2 Control scheme of active clamp PMOS Q9 where the switching frequency of the PMOS is doble the f sw. Source: ... Considering the pulsed drain current of PMOS is far smaller than NMOS, designer ...
For medical ultrasound ICs, X-Fab has also released a low Rds(on) pmos module with new pmos primitive devices operating up to 235V. They are said to have 40% lower on-resistance compared with regular ...
When ‘A” is at vdd i.e. ‘1’ : Mc & Mb act as Pmos & Nmos decap. There is no leakage from source to drain in default for decap, leakage is optimized. So, while talking about the whole design which is ...
Results that may be inaccessible to you are currently showing.
Hide inaccessible results