Epitaxial wafer supplier IQE plc said Thursday its newly developed UltraSmooth strained silicon technology has demonstrated speed improvements for both nMOS and pMOS devices below 0.10 microns. IQE ...

Figure 1: Figure 1: ggNMOS schematic (a), and the ggNMOS IV characteristic (b). How does NMOS snapback work? To understand the physical operation, one should study the silicon cross-section of the ...

The 30-nm gate length NMOS transistors — considered the more difficult to create than PMOS transistor, and more commonly used on a chip — operate with a 0.85-picosecond gate delay with an operating ...

For medical ultrasound ICs, X-Fab has also released a low Rds(on) pmos module with new pmos primitive devices operating up to 235V. They are said to have 40% lower on-resistance compared with regular ...