High power IGBT modules employ hybrid IC gate drives including protection circuits that implement desaturation detection or real time control. ERIC R. MOTTO Powerex Inc. High power IGBT module ...

It’s also advisable to have a FET oscilloscope probe to look at the gate circuits. A regular probe has over 7 pF of capacitance, and at the speed the SIC1182K can provide, that’s a lot of ...

Gate-source voltage setting (5.6V, 10V) depending on input voltage with a built-in charge pump circuit Overvoltage lockout supports 5V to 24V Low input OFF current: I Q(OFF) = 0.5μA (max) @V IN ...

Toshiba has introduced an opto-isolated SiC gate driver, that includes an active Miller clamp to tame self-turn-on behaviour in the driven device. Named TLP5814H, it is a “gate driver photocoupler ...