NOR flash memory wiring and structure on silicon (Credit: Cyferz, Wikimedia) To write a NOR Flash cell (set it to logical ‘0’), an elevated voltage is applied to the control gate, inducing HCI.

Flash memory is going to hit a brick wall at about 20 nanometers. But how do we get beyond that? Well, our technique is perfectly suited for sub-10-nanometer circuits," he said. Austin tech design ...

They are many times faster than flash memory and require significantly less ... are working on the use of corresponding neuromorphic circuits -- but often with a lack of understanding of how ...

Ltd., today unveiled the company’s developments in Dynamic Flash Memory (DFM)® technology ... recent IEEE ISSCC (International Solid-State Circuits Conference) papers. Modelling DFM at 4F ...