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Electrostatic discharge (ESD) protection for mixed-voltage I/O interfaces has been one of the major challenges of system-on-a-chip (SOC) implementation in nanoscale CMOS processes. Moreover, the gate ...
Thus, the voltage across ESD-protection diode D 1A or D 1B approaches 0V, and neither diode's leakage current affects the sensor's output signal. Depending on the polarity of an ESD event you apply to ...
One of the simplest and most widely used ESD protection techniques for CMOS circuits is to connect diodes between the input or output pins and the power supply rails. Diodes are semiconductor ...
Abstract. For three fundamental input-protection schemes suitable for high-frequency CMOS ICs, which utilize protection devices such as NMOS transistors, thyristors, and diodes, we attempt an in-depth ...
A Thyristor-Only Input ESD Protection Scheme for CMOS RF ICs () HTML Download as PDF (Size: 826KB) ePub , PP. 170-182 DOI: 10.4236/cs.2011.23025 6,506 Downloads 10,488 Views Citations ...
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