Abstract: The impact of ESD-induced soft drain junction damage on product lifetime was investigated. Several thousand input-output (I/O) pads of a 0.35 /spl mu/m CMOS IC were stressed by ESD ...

Abstract: On-chip ESD protection circuits realized with novel diode structures, without the field-oxide boundary across the p/n junction, are proposed. A PMOS (NMOS) structure is especially inserted ...