The researchers are hopeful that this could lead to the development of computer memory devices with higher density and performance but lower energy consumption. Since hafnium oxide is already ...

Ni’s work in the area of ferroelectric memory is part of an emerging field in the development of high performance and energy-efficient storage and computing devices. Better integrating ferroelectric ...

"So far, we've built a device that holds one bit, on par with other high-temperature computer memory demonstrations. With more development and investment, it could in theory hold megabytes or ...

This method of changing the electrical resistance in computer memory devices, and allowing information processing and memory to exist in the same place, could lead to the development of computer ...

Boise fab as part of a $200B U.S. expansion, boosting semiconductor jobs and AI chip production across three states.

Instead of managing multiple devices with varying memory options and the associated development and qualification costs, Stellar with xMemory introduces a single, innovative device with extensible ...