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Intel looks beyond silicon, outlines breakthroughs in atomically-thin 2D transistors, chip packaging, and interconnects at IEDM 2024the next step of GAA is to change the materials used in NMOS and PMOS transistors to 2D materials (only a few atoms thick).
In this case, "2D" refers to the fact that the transistor is built entirely out of atomic monolayers. As you can see in the diagram above, this results in a FET that is just six atoms thick.
Gouri Sankar Kar, vice president of R&D at imec, noted in an interview with Semiconductor Engineering that CFET architectures, which place PMOS and NMOS ... packed transistors seen in modern ...
In this case, "2D" refers to the fact that the transistor is built entirely out of atomic monolayers. As you can see in the diagram above, this results in a FET that is just six atoms thick.
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